SST2222AT116 SST2222AT116 is a NPN bipolar transistor by ROHM Semiconductor with maximum collector-emitter voltage of 40V, collector current of 600mA, and power dissipation of 350mW. Housed in a surface-mount SOT-23 package.
Mfr Part #:

SST2222AT116

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
SST2222AT116 is a NPN bipolar transistor by ROHM Semiconductor with maximum collector-emitter voltage of 40V, collector current of 600mA, and power dissipation of 350mW. Housed in a surface-mount SOT-23 package.
✓ Total Stock: 340 pcs
$ Price Range: $0.51

SST2222AT116 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
240 pcs
240 pcs On Request 1 On Request On Request On Request On Request 2026-04-21 02:16:40
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

SST2222AT116 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SST2222AT116 Description

Short technical summary and product information.

The SST2222AT116 from ROHM Semiconductor is a NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It supports a maximum collector-emitter voltage of 40V and a continuous collector current of 600mA with a power dissipation of 350mW, making it suitable for moderate power circuits.

 

Electrical characteristics include a minimum DC current gain (hFE) of 100 at Ic=150mA and Vce=10V, and a maximum collector-emitter saturation voltage of 1V at Ib=50mA and Ic=500mA. The transistor offers a minimum transition frequency of 300MHz, enabling use in high-frequency signal processing. The maximum junction temperature is rated at 150°C.

 

The device is offered in a standard SOT-23 surface-mount package (also known as TO-236-3 or SC-59), which is compact and suitable for automated assembly. The mounting type is surface mount, and the supplier package is designated as SST3.

SST2222AT116 Quick Information

Product Type: Bipolar Transistor
Canonical Name: ROHM Semiconductor SST2222AT116 NPN Bipolar Transistor
Subcategory: NPN

SST2222AT116 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SST2222AT116 Estimated Pricing

Qty Low High
1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

SST2222AT116 Features

  • NPN silicon bipolar junction transistor.
  • Maximum collector-emitter voltage of 40V.
  • Rated for continuous collector current of 600mA.
  • Minimum DC current gain of 100 at 150mA.
  • Packaged in surface-mount SOT-23 (TO-236).

SST2222AT116 Applications

  • Use in general-purpose switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for high-frequency driver applications.
  • Applicable in low-power DC/DC converters.

SST2222AT116 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SST2222AT116?

The maximum collector-emitter voltage (Vce) is 40V.

What is the maximum collector current rating?

The maximum collector current is 600mA.

What is the power dissipation of the device?

The maximum power dissipation is 350mW.

What package does the SST2222AT116 come in?

It is available in a SOT-23 surface-mount package, also identified as TO-236-3 or SC-59.

What is the junction temperature range for this transistor?

The maximum junction temperature is 150°C.

What is the minimum DC current gain (hFE) of the SST2222AT116?

The minimum hFE is 100 at Ic=150mA and Vce=10V.

What is the transition frequency of the SST2222AT116?

The minimum transition frequency (fT) is 300MHz.

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