SST12LP19E-QX8E

The SST12LP19E-QX8E is a 2.4 GHz high-efficiency, high-gain power amplifier module from Microchip Technology, based on InGaP/GaAs HBT technology. It is designed for compliance with IEEE 802.11b/g/n applications, providing a typical gain of 25 dB across the 2.4–2.5 GHz frequency range. The device offers high linear output power, meeting 802.11g OFDM ACPR requirements up to 23.5 dBm and 802.11b ACPR requirements up to 23 dBm. It achieves high power-added efficiency, with a typical 34% at 23.5 dBm for 802.11g and 31% at 23 dBm for 802.11b. The amplifier features low shut-down current of approximately 2 µA and operates down to a 2.75 V bias voltage. It exhibits limited variation over temperature, with only ~2.5 dB gain variation and ~1 dB power variation between -40°C and +85°C. An on-chip power detector with over 20 dB dynamic range is also included, offering temperature and load insensitivity. The SST12LP19E-QX8E is available in an 8-contact XSON package measuring 2mm x 2mm x 0.45mm, and a 6-contact XSON package measuring 1.5mm x 1.5mm x 0.45mm. It is suitable for WLAN, Home RF, cordless phones, and other 2.4 GHz ISM wireless equipment.

This RF amplifier is designed for surface-mount (SMT) applications. Its compact XSON8 package makes it suitable for space-constrained designs. The device operates within a temperature range of -40°C to +85°C, ensuring reliable performance in various environmental conditions. The high gain and efficiency make it a strong candidate for power amplifier stages in wireless communication systems.