SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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44 pcs
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44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SSS7N60A from On Semiconductor is an advanced power MOSFET designed for demanding applications. This N-channel MOSFET boasts a high breakdown voltage of 600V and a low minimum drain-source resistance of 1.2Ω, ensuring efficient power transfer.
With a maximum power dissipation of 48W and an operating temperature range up to 150°C, the SSS7N60A is built for reliability under stress. The component has 3 terminals and is suitable for various power switching and control circuits.
This MOSFET is manufactured by Samsung Semiconductor and is part of the N-CHANNEL POWER MOSFETS family. Its specifications make it a suitable choice for designers looking for robust performance in power electronics.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SSS7N60A MOSFET has a minimum breakdown voltage of 600V.
The minimum drain-source resistance for the SSS7N60A is 1.2Ω.
The SSS7N60A has a maximum power dissipation of 48W.
The SSS7N60A can operate at a maximum temperature of 150°C.
The SSS7N60A is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SSS7N60A is 1 Unlimited.
