| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
293 pcs
|
293 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSS2N60B is a high-voltage N-Channel Power MOSFET designed for efficient switching and power management applications. It is rated for a maximum drain-source voltage of 600V and continuous drain current of 2A. The device offers a maximum on-resistance of 5Ω at 1A drain current and 10V gate-source voltage, enabling low conduction losses in moderate-power designs. The gate charge is 17nC at 10V, and the input capacitance is 490pF at 25V, which supports reasonable switching speeds for typical power conversion circuits. The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, suitable for direct mounting on heatsinks. The junction temperature range extends from -55°C to 150°C, allowing reliable operation in demanding environments. This device is appropriate for offline power supplies, DC-DC converters, motor control circuits, and other general-purpose high-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V maximum.
It comes in a TO-220-3 Full Pack (also TO-220F) through-hole package.
-55°C to 150°C junction temperature.
2A (at Tj).
5Ω maximum at 1A and 10V gate drive.
17nC maximum at 10V gate-source voltage.