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SSR1N60BTM The SSR1N60BTM is a 600V N-Channel MOSFET from ON Semiconductor. It features a surface mount DPAK package and a continuous drain current of 0.9A.
Mfr Part #:

SSR1N60BTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SSR1N60BTM is a 600V N-Channel MOSFET from ON Semiconductor. It features a surface mount DPAK package and a continuous drain current of 0.9A.
✓ Total Stock: 3,192 pcs
$ Price Range: $2.56

SSR1N60BTM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,192 pcs
On Request
3192 pcs On Request 1 On Request On Request 15+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSR1N60BTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SSR1N60BTM Description

Short technical summary and product information.

The SSR1N60BTM is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It utilizes advanced planar DMOS technology for optimized performance in high-efficiency switch mode power supplies. This device offers a drain-source voltage of 600V and a continuous drain current of 0.9A at 25°C.

 

Key electrical characteristics include a maximum Rds On of 12 Ohms at 450mA and 10V, a gate threshold voltage between 2V and 4V, and a gate charge of 7.7 nC maximum. The MOSFET is designed for fast switching and can withstand high energy pulses.

 

Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the SSR1N60BTM operates within a temperature range of -55°C to 150°C. Its power dissipation is rated at 2.5W (ambient) and 28W (case).

 

This component is suitable for applications requiring efficient power switching and high voltage handling capabilities.

SSR1N60BTM Quick Information

Product Type: MOSFET
Canonical Name: SSR1N60BTM 600V N-Channel MOSFET
Subcategory: Power MOSFET

SSR1N60BTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSR1N60BTM Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSR1N60BTM Features

  • 600V drain-source breakdown voltage.
  • 0.9A continuous drain current.
  • 12 Ohm maximum Rds On.
  • Surface mount DPAK package.
  • Wide operating temperature range.

SSR1N60BTM Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Works in high-voltage inverter stages.

SSR1N60BTM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SSR1N60BTM?

The drain-source breakdown voltage is 600V minimum.

What is the maximum continuous drain current?

The maximum continuous drain current is 0.9A at 25°C case temperature.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package type is the SSR1N60BTM available in?

It is available in a surface-mount DPAK (TO-252) package.

What is the typical gate charge of this MOSFET?

The typical gate charge is 5.9 nC at Vgs = 10V.

What is the maximum on-resistance?

The maximum on-resistance is 12 Ohms at Vgs = 10V and Id = 450mA.

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