| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSP45N20A is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 200V and a continuous drain current of 35A at Tc=25°C. The device has a maximum on-state resistance of 65mOhm at Vgs=10V and Id=17.5A, with a typical value of 54mOhm.
This MOSFET is designed for high-efficiency power switching applications. It offers a total power dissipation of 175W at Tc=25°C and operates over a junction temperature range of -55°C to +150°C. The device also includes avalanche energy ratings: single pulse avalanche energy of 653mJ and repetitive avalanche energy of 17.6mJ.
The SSP45N20A is suitable for use in switching power supplies, motor control, and other power conversion circuits. Its low Rds(on) helps minimize conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 200V.
The continuous drain current is 35A at Tc=25°C and 22.2A at Tc=100°C.
The maximum on-state resistance is 65mOhm at Vgs=10V and Id=17.5A, with a typical value of 54mOhm.
The operating junction temperature range is -55°C to +150°C.
The maximum gate threshold voltage is 4V at a drain current of 250µA.