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SSP1N60A The SSP1N60A is an N-channel power MOSFET from ON Semiconductor. It features a 600V drain-source voltage and is designed for through-hole mounting in a TO-220 package.
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SSP1N60A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SSP1N60A is an N-channel power MOSFET from ON Semiconductor. It features a 600V drain-source voltage and is designed for through-hole mounting in a TO-220 package.
✓ Total Stock: 2,430 pcs
$ Price Range: $2.56

SSP1N60A Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
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2,430 pcs
On Request
2430 pcs On Request 1 On Request On Request 02+ On Request On Request
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SSP1N60A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SSP1N60A Description

Short technical summary and product information.

The SSP1N60A is an N-channel power MOSFET manufactured by ON Semiconductor. This component is designed for through-hole mounting and comes in a standard TO-220 package. It offers a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current of 1A (Tc). The operating temperature range is from -55°C to 150°C (TJ).

 

Key electrical characteristics include a maximum Rds On of 12 Ohm at 500mA and 10V, a gate charge (Qg) of 11 nC at 10V, and an input capacitance (Ciss) of 190 pF at 25V. The gate-to-source voltage (Vgs) maximum is ±30V, with a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum power dissipation is rated at 34W (Tc).

 

This MOSFET utilizes Metal Oxide technology. Its TO-220-3 package and through-hole mounting type make it suitable for various power switching applications where a robust and reliable component is required.

SSP1N60A Quick Information

Product Type: MOSFET
Canonical Name: SSP1N60A N-Channel Power MOSFET
Subcategory: Single

SSP1N60A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSP1N60A Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSP1N60A Features

  • N-channel power MOSFET technology.
  • 600V drain-to-source voltage rating.
  • 1A continuous drain current.
  • TO-220 package for through-hole mounting.
  • Wide operating temperature range.

SSP1N60A Applications

  • Suitable for power switching circuits.
  • Used in general purpose power supplies.
  • Applicable in motor control systems.
  • Ideal for DC-DC converters.

SSP1N60A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SSP1N60A?

The maximum drain-to-source voltage (Vdss) for the SSP1N60A is 600 V.

What is the continuous drain current of the SSP1N60A?

The continuous drain current for the SSP1N60A is 1 A (Tc).

What is the package type for the SSP1N60A?

The SSP1N60A is available in a TO-220-3 package.

How is the SSP1N60A mounted?

The SSP1N60A is designed for through-hole mounting.

What is the operating temperature range of the SSP1N60A?

The operating temperature range for the SSP1N60A is -55°C to 150°C (TJ).

What is the maximum Rds On for the SSP1N60A?

The maximum Rds On for the SSP1N60A is 12 Ohm at 500mA and 10V.

What is the gate charge (Qg) of the SSP1N60A?

The gate charge (Qg) of the SSP1N60A is 11 nC at 10V.

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