| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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241,067 pcs
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241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba SSM6P25TU is a dual P-channel MOSFET with a drain-source voltage rating of 20V and a maximum continuous drain current of 500 mA. It features a low maximum drain-source on-resistance of 260 mΩ and a gate threshold voltage of 1.1V.
This MOSFET is constructed with silicon (Si) and operates in enhancement mode. It is configured as an isolated device with two elements per chip. The component is housed in a compact UF package, suitable for surface mounting.
With a maximum power dissipation of 500 mW and an operating temperature range from -55°C to +150°C, the SSM6P25TU is designed for reliable performance in demanding environments. Its P-channel configuration and dual-element design make it suitable for switching and amplification applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum continuous drain current is 500mA.
The maximum drain-source on-resistance is 260mΩ.
The maximum gate threshold voltage is 1.1V.
The maximum power dissipation is 500mW.
The operating temperature range is -55°C to +150°C.
The SSM6P25TU comes in a surface-mount package with 6 pins, measuring 2.0mm x 1.7mm x 0.7mm.