| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,103 pcs
|
7103 pcs | On Request | 1 | On Request | On Request | 2324/2250 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM6N815R,LF is a dual N-Channel MOSFET designed for surface mount applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous current rating of 2A (Ta).
Key electrical characteristics include a maximum on-resistance (Rds On) of 103mOhm at 2A and 10V, a gate charge (Qg) of 3.1nC at 4.5V, and a gate threshold voltage (Vgs(th)) of 2.5V at 100µA. This MOSFET supports logic level gate and 4V drive.
Packaged in a 6-SMD, Flat Leads (6-TSOP-F) configuration, the SSM6N815R,LF has a maximum operating temperature of 150°C and a power dissipation of 1.8W (Ta). Its input capacitance (Ciss) is 290pF at 15V.
This component is suitable for various electronic designs requiring efficient switching and power management in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The continuous current rating is 2A (Ta).
The maximum operating temperature is 150°C.
It is supplied in a 6-SMD, Flat Leads package, specifically a 6-TSOP-F.
Yes, it is RoHS3 Compliant.