SSM6N55NU,LF The Toshiba SSM6N55NU,LF is a dual N-channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a continuous drain current of 4A.
Mfr Part #:

SSM6N55NU,LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM6N55NU,LF is a dual N-channel MOSFET designed for surface mount applications. It features a 30V drain-to-source voltage and a continuous drain current of 4A.
✓ Total Stock: 200,000 pcs
$ Price Range: $1.64

SSM6N55NU,LF Available from 1 distributor

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✓ Non-Authorised
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200,000 pcs
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SSM6N55NU,LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SSM6N55NU,LF Description

Short technical summary and product information.

This Toshiba SSM6N55NU,LF is a dual N-channel MOSFET with a 30V drain-to-source voltage rating and a continuous drain current capability of 4A. It offers a low on-resistance of 46mOhm at 4A and 10V, making it efficient for power switching applications.

 

The MOSFET operates at a maximum junction temperature of 150°C and is housed in a compact 6-µDFN (2x2) package, suitable for space-constrained designs. Its surface mount type facilitates automated assembly processes.

 

Key electrical characteristics include a gate charge of 2.5nC at 4.5V and an input capacitance of 280pF at 15V. The device features a logic level gate, enhancing its compatibility with lower voltage control signals. It is specified with a gate threshold voltage of 2.5V at 100µA.

 

The SSM6N55NU,LF is categorized under Transistors - FETs, MOSFETs - Arrays, indicating its suitability for applications requiring multiple MOSFETs in a single package. Its RoHS 3 compliance suggests adherence to environmental regulations.

SSM6N55NU,LF Quick Information

Product Type: MOSFET
Canonical Name: Toshiba SSM6N55NU,LF Dual N-Channel MOSFET
Subcategory: Dual N-Channel

SSM6N55NU,LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM6N55NU,LF Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM6N55NU,LF Features

  • Dual N-channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 4A continuous drain current capability.
  • Low 46mOhm on-resistance.
  • Compact 6-µDFN (2x2) surface mount package.

SSM6N55NU,LF Applications

  • Suitable for power switching circuits.
  • Ideal for space-constrained designs.
  • Compatible with logic-level gate signals.
  • Used in array configurations.

SSM6N55NU,LF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SSM6N55NU,LF?

The drain-to-source voltage (Vdss) for the SSM6N55NU,LF is 30V.

What is the continuous drain current of the SSM6N55NU,LF?

The SSM6N55NU,LF can handle a continuous drain current of 4A.

What is the on-resistance of the SSM6N55NU,LF?

The maximum on-resistance (Rds On) for the SSM6N55NU,LF is 46mOhm when measured at 4A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature for the SSM6N55NU,LF is up to 150°C (TJ).

What type of package is the SSM6N55NU,LF in?

The SSM6N55NU,LF is supplied in a 6-µDFN (2x2) package.

Is the SSM6N55NU,LF RoHS compliant?

The RoHS status for the SSM6N55NU,LF is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) for the SSM6N55NU,LF is 1 Unlimited.

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