| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This Toshiba SSM6N55NU,LF is a dual N-channel MOSFET with a 30V drain-to-source voltage rating and a continuous drain current capability of 4A. It offers a low on-resistance of 46mOhm at 4A and 10V, making it efficient for power switching applications.
The MOSFET operates at a maximum junction temperature of 150°C and is housed in a compact 6-µDFN (2x2) package, suitable for space-constrained designs. Its surface mount type facilitates automated assembly processes.
Key electrical characteristics include a gate charge of 2.5nC at 4.5V and an input capacitance of 280pF at 15V. The device features a logic level gate, enhancing its compatibility with lower voltage control signals. It is specified with a gate threshold voltage of 2.5V at 100µA.
The SSM6N55NU,LF is categorized under Transistors - FETs, MOSFETs - Arrays, indicating its suitability for applications requiring multiple MOSFETs in a single package. Its RoHS 3 compliance suggests adherence to environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SSM6N55NU,LF is 30V.
The SSM6N55NU,LF can handle a continuous drain current of 4A.
The maximum on-resistance (Rds On) for the SSM6N55NU,LF is 46mOhm when measured at 4A and 10V.
The operating temperature for the SSM6N55NU,LF is up to 150°C (TJ).
The SSM6N55NU,LF is supplied in a 6-µDFN (2x2) package.
The RoHS status for the SSM6N55NU,LF is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SSM6N55NU,LF is 1 Unlimited.