| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,305 pcs
|
2305 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs(th) (Max) @ Id |
The SSM6N43FU,LF is a dual N-channel MOSFET manufactured by Toshiba, designed for low-voltage switching applications. It is rated for a maximum drain-source voltage of 20V and a continuous drain current of 500mA. The device features a logic level gate with 1.5V drive capability, enabling direct interfacing with low-voltage logic circuits.
Key electrical characteristics include a maximum on-resistance of 630mOhm at 200mA and 5V gate-source voltage, a typical gate threshold voltage of 1V at 1mA drain current, and a gate charge of 1.23nC at 4V. The input capacitance is 46pF at 10V drain-source voltage, and the maximum power dissipation is 200mW. The operating junction temperature range extends to 150°C.
The MOSFET is housed in a compact 6-TSSOP, SC-88, SOT-363 surface-mount package (supplier package US6), making it suitable for space-constrained designs. The dual N-channel configuration integrates two independent MOSFETs in a single package, saving board space and simplifying layout.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 500mA.
It comes in a 6-TSSOP, SC-88, SOT-363 surface-mount package (supplier package US6).
The maximum operating junction temperature is 150°C.
Yes, it features a logic level gate with 1.5V drive.