| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Turn Off Time | |
| Turn On Time | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM6N37FU,LF is a silicon N-channel MOSFET designed for high-speed switching and analog switch applications. It offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 250mA at 25°C.
Key electrical characteristics include a low ON-resistance, with values as low as 2.20 Ω at 100mA and 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 1.0V at 1mA. Input capacitance (Ciss) is 12pF at 10V, and output capacitance (Coss) is 5.5pF.
This MOSFET operates at temperatures up to 150°C and is housed in a compact 6-TSSOP, SC-88, SOT-363 (US6) surface mount package. It supports 1.5V drive and logic-level gate operation, making it versatile for various electronic designs.
The device is suitable for applications requiring efficient switching and low ON-state losses. Its dual N-channel configuration provides flexibility in circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
250mA.
Surface mount US6 (6-TSSOP, SC-88, SOT-363).
150°C.
0.35V minimum to 1.0V maximum.
2.2Ω at 100mA and 4.5V gate voltage.
Yes, it features logic level gate with 1.5V drive capability.