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SSM6N16FUTE85LF Dual N-channel MOSFET from Toshiba, rated for 20V drain-source voltage and 100mA continuous drain current, with 3Ω on-resistance at 4V gate drive.
Mfr Part #:

SSM6N16FUTE85LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
Dual N-channel MOSFET from Toshiba, rated for 20V drain-source voltage and 100mA continuous drain current, with 3Ω on-resistance at 4V gate drive.
✓ Total Stock: 200,000 pcs
$ Price Range: $1.64

SSM6N16FUTE85LF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
200,000 pcs
On Request
200000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSM6N16FUTE85LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SSM6N16FUTE85LF Description

Short technical summary and product information.

The Toshiba SSM6N16FUTE85LF is a dual N-channel MOSFET (Metal Oxide) designed for low-power switching applications. It integrates two independent N-channel MOSFETs in a single US6 package, offering space-saving benefits for compact designs.

 

Key electrical specifications include a maximum drain-source voltage of 20V, a continuous drain current of 100mA (200mA pulse), and a maximum drain-source on-resistance of 3Ω at VGS=4V and ID=10mA. The gate threshold voltage is typically 1.1V at 100µA. Input capacitance is 9.3pF at 3V, indicating suitability for high-frequency switching.

 

The device is housed in a US6 surface-mount package with a maximum power dissipation of 200mW at ambient temperature 25°C. Operating junction temperature range is -55°C to 150°C. This MOSFET array is suitable for load switching, logic level conversion, and signal routing in battery-powered and portable electronics.

SSM6N16FUTE85LF Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Toshiba SSM6N16FUTE85LF Dual N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Arrays

SSM6N16FUTE85LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM6N16FUTE85LF Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM6N16FUTE85LF Features

  • Dual N-channel MOSFET in US6 package.
  • Rated for 20V drain-source voltage.
  • 100mA continuous drain current.
  • 3Ω on-resistance at 4V gate drive.
  • Operating temperature range -55 to 150°C.

SSM6N16FUTE85LF Applications

  • Ideal for load switching in portable devices.
  • Used in logic level conversion circuits.
  • Suitable for signal routing applications.
  • Common in battery management systems.

SSM6N16FUTE85LF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SSM6N16FUTE85LF?

20V.

What is the continuous drain current rating?

100mA.

What is the typical on-resistance?

3Ω maximum at VGS=4V and ID=10mA.

What is the gate threshold voltage?

1.1V maximum at VDS=3V and ID=0.1mA.

What is the input capacitance?

9.3pF at VDS=3V and f=1MHz.

What is the maximum power dissipation?

200mW at Ta=25°C.

What is the operating temperature range?

Junction temperature up to 150°C, storage temperature -55 to 150°C.

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