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SSM6N16FE,L3F The Toshiba SSM6N16FE,L3F is a 2 N-Channel MOSFET array suitable for high-speed and analog switching applications. It features a 20V drain-source voltage and 100mA continuous drain current.
Mfr Part #:

SSM6N16FE,L3F

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM6N16FE,L3F is a 2 N-Channel MOSFET array suitable for high-speed and analog switching applications. It features a 20V drain-source voltage and 100mA continuous drain current.
✓ Total Stock: 13,066 pcs
$ Price Range: $1.64

SSM6N16FE,L3F Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
13,066 pcs
On Request
13066 pcs On Request 1 On Request On Request On Request On Request On Request
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SSM6N16FE,L3F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SSM6N16FE,L3F Description

Short technical summary and product information.

The Toshiba SSM6N16FE,L3F is a silicon N-channel MOS type field-effect transistor array designed for high-speed switching and analog switching applications. Its compact SOT-563 or SOT-666 package makes it suitable for high-density mounting.

 

Key electrical specifications include a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 100mA at 25°C. The on-resistance (Rds(on)) is a maximum of 3 Ohms at 10mA and 4V Vgs. The gate threshold voltage (Vth) is a maximum of 1.1V at 100µA.

 

This device operates within a channel temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW at 25°C when mounted on a standard FR4 board. The input capacitance (Ciss) is 9.3pF at 3V.

 

Designed for surface mounting, the SSM6N16FE,L3F is available in Tape & Reel or Cut Tape packaging. It is suitable for various electronic circuits requiring compact and efficient switching.

SSM6N16FE,L3F Quick Information

Product Type: MOSFET Array
Canonical Name: Toshiba SSM6N16FE,L3F 2 N-Channel MOSFET Array
Subcategory: Array

SSM6N16FE,L3F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM6N16FE,L3F Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM6N16FE,L3F Features

  • Dual N-Channel MOSFET array
  • 20V Drain-Source Voltage
  • 100mA Continuous Drain Current
  • Low On-Resistance (3 Ohm max)
  • Surface Mount SOT-563/SOT-666 Package

SSM6N16FE,L3F Applications

  • Load switching in portable devices.
  • Logic level conversion circuits.
  • Signal multiplexing and routing.
  • Battery-powered equipment protection.

SSM6N16FE,L3F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SSM6N16FE,L3F?

20V.

What is the continuous drain current rating?

100mA DC.

What is the on-resistance at different gate voltages?

3 Ohm at 4V gate drive, 4 Ohm at 2.5V, and 15 Ohm at 1.5V.

What is the gate threshold voltage?

Maximum 1.1V at Vds=3V and Id=0.1mA.

What is the input capacitance?

9.3pF at Vds=3V and f=1MHz.

What are the switching times?

Turn-on time 70ns and turn-off time 125ns typical at Vdd=3V, Id=10mA.

What package options are available for the SSM6N16FE,L3F?

SOT-563 or SOT-666 surface-mount package with supplier device package ES6.

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