| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
904,000 pcs
|
904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM6N15AFU,LF is a dual N-Channel MOSFET array featuring a logic level gate. It is designed for surface mount applications and comes in a 6-TSSOP, SC-88, SOT-363 package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 100mA. The Rds On is a maximum of 3.6 Ohm at 10mA and 4V, with a gate threshold voltage (Vgs(th)) maximum of 1.5V at 100µA. The input capacitance (Ciss) is 13.5pF maximum at 3V.
This MOSFET array operates at temperatures up to 150°C (TJ) and has a power dissipation of 300mW. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
The SSM6N15AFU,LF is suitable for various electronic circuits requiring compact and efficient switching or amplification. Its surface mount package facilitates integration into dense PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
100mA.
6-TSSOP, SC-88, SOT-363 (surface mount); supplier package US6.
150°C (TJ).
Yes, the FET feature is logic level gate.
3.6 ohms at 10mA and 4V gate-source voltage.
300mW.