| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Toshiba SSM6L35FE,LM is a versatile N/P-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and supports current ratings of 180mA for the N-channel and 100mA for the P-channel.
The MOSFET features a low Rds On of 3 Ohm maximum at 50mA and 4V, and a gate threshold voltage (Vgs(th)) of 1V maximum at 1mA. Its input capacitance (Ciss) is 9.5pF maximum at 3V.
Designed for surface mounting, this component comes in a SOT-563 or SOT-666 package, identified by the ES6 supplier device package code. It operates at temperatures up to 150°C (TJ) and has a power dissipation of 150mW.
The SSM6L35FE,LM is RoHS3 compliant and has an MSL rating of 1, indicating unlimited usability under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The current ratings are 180mA for the N-channel and 100mA for the P-channel.
The maximum Rds On is 3 Ohm at 50mA and 4V.
The operating temperature range is up to 150°C (TJ).
It is supplied in SOT-563 or SOT-666 packages.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1.