| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM6L16FETE85LF is a versatile N and P-channel MOSFET array suitable for various electronic applications. It operates with a maximum drain-to-source voltage of 20V and can handle a continuous drain current of 100mA at 25°C. The device has a maximum power dissipation of 150mW and an on-resistance of 3 Ohm at 10mA and 4V.
This MOSFET array features a gate threshold voltage of 1.1V at 0.1mA and an input capacitance of 9.3pF at 3V. It is designed for surface mounting and comes in a SOT-563, SOT-666 package. The operating temperature range is up to 150°C (TA).
Key specifications include a 20V Vdss, 100mA Id, and 150mW power rating. The device is RoHS compliant and has a Moisture Sensitivity Level of 1. It is supplied in Tape & Reel or Cut Tape packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SSM6L16FETE85LF is 20V.
The continuous drain current (Id) at 25°C is 100mA.
The maximum on-resistance (Rds On) is 3 Ohm at 10mA and 4V.
The maximum gate threshold voltage (Vgs(th)) is 1.1V at 0.1mA.
The maximum operating temperature is 150°C (TA).
The SSM6L16FETE85LF array contains N and P-Channel FETs.
The SSM6L16FETE85LF is supplied in a SOT-563, SOT-666 package and is available in Tape & Reel (TR) or Cut Tape (CT).