Mfr Part #:

SSM6K513NU,LF

Mfr Name: Toshiba

The Toshiba SSM6K513NU,LF is an N-Channel MOSFET designed for power management switch applications. It offers a 30V drain-source voltage and 15A continuous drain current.

✓ Total Stock: 100 pcs

$ Price Range: $2.56

SSM6K513NU,LF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	100 pcs On Request	100 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SSM6K513NU,LF Description

Short technical summary and product information.

The Toshiba SSM6K513NU,LF is a silicon N-Channel MOSFET from the U-MOS IX-H series, suitable for power management switch applications. It features a 30V drain-source voltage (VDSS) and a continuous drain current (ID) of 15A at 25°C ambient temperature.

This MOSFET boasts low ON-resistance, with a typical value of 8.0 mΩ at VGS = 4.5V and 6.5 mΩ at VGS = 10V. It operates with a 4.5V drive voltage and has a gate threshold voltage (Vth) ranging from 1.1V to 2.1V.

The device is housed in a compact 6-UDFNB (2x2) surface mount package, identified as 6-WDFN Exposed Pad. It has an operating temperature range of -55°C to 150°C and a maximum power dissipation of 1.25W (Ta) when mounted on an FR4 board.

Key electrical characteristics include an input capacitance (Ciss) of 1130 pF, output capacitance (Coss) of 350 pF, and reverse transfer capacitance (Crss) of 52 pF. Switching times are also specified, with turn-on time at 28 ns and turn-off time at 33 ns.

SSM6K513NU,LF Quick Information

Product Type: MOSFET

Canonical Name: SSM6K513NU,LF Toshiba N-Channel MOSFET

Subcategory: N-Channel

SSM6K513NU,LF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SSM6K513NU,LF Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM6K513NU,LF Features

N-Channel MOSFET for power management.
30V Drain-Source Voltage (Vdss).
15A Continuous Drain Current (Id).
Low ON-resistance: 8.0 mΩ typ. @ 4.5V.
Compact 6-UDFNB (2x2) surface mount package.

SSM6K513NU,LF Applications

Suitable for power management switches.
Designed for high-efficiency switching circuits.
Used in battery-powered devices.
Applicable in portable electronics.
Ideal for load switch applications.

SSM6K513NU,LF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

30 V.

What is the package type?

6-UDFNB (2x2) also known as 6-WDFN Exposed Pad.

What is the gate threshold voltage range?

1.1 V to 2.1 V (at VDS=10V, ID=0.1mA).

What is the typical on-resistance at 10V gate drive?

6.5 mΩ (typical) at VGS=10V, ID=4A.

What is the total gate charge?

7.5 nC (typical) at VDD=15V, ID=15A, VGS=4.5V.

What is the maximum drain current?

15 A continuous (Ta), 50 A pulsed.

What are the typical switching times?

Turn-on time 28 ns, turn-off time 33 ns (tested at VDD=15V, ID=1A, VGS=0 to 4.5V, RG=30Ω).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Toshiba
Current	15 A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1130 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TA)
Power Dissipation (Max)	1.25 W (Ta)
Rds On (Max) @ Id, Vgs	8.9mOhm @ 4A, 10V
Storage Temperature	-55 to 150 °C
Supplier Device Package	6-UDFNB (2x2)
Technology	MOSFET (Metal Oxide)
Turn Off Time	33 ns
Turn On Time	28 ns
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.1V @ 100µA