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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba SSM6J511NU,LF is a P-Channel MOSFET belonging to the U-MOS II technology family. It is designed for power management switch applications.
Key electrical characteristics include a maximum drain-source voltage of 12V and a continuous drain current of 14A (Ta). The device offers low drain-source on-resistance, with a maximum of 9.1mOhm at 4A and 8V. It also features a gate drive voltage of 1.8V and a gate charge of 47 nC at 4.5V.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a storage temperature range of -55°C to 150°C. Power dissipation is rated at 1.25W or 2.5W depending on mounting conditions.
Packaged in a compact 6-UDFNB (2x2) footprint, the SSM6J511NU,LF is suitable for surface mounting. Its absolute maximum ratings include a drain-source voltage of -12V and a gate-source voltage of ±10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -12V.
It is available in a 6-WDFN Exposed Pad package, also known as 6-UDFNB (2x2).
-55°C to 150°C.
The maximum gate-source threshold voltage is 1V at 1mA.
The maximum on-resistance is 9.1mOhm at 4A, 8V gate drive.
The maximum gate charge is 47nC at 4.5V.
The maximum input capacitance is 3350pF at 6V drain-source voltage.