| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM6J505NU,LF is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 12V and a continuous drain current (Ta) of 12A. The device has a maximum power dissipation of 1.25W (Ta).
Key electrical characteristics include a gate charge (Qg) of 37.6 nC at 4.5V and an input capacitance (Ciss) of 2700 pF at 10V. The on-resistance (Rds On) is a maximum of 12 mOhm at 4A and 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 1mA, with a maximum gate-source voltage (Vgs) of ±6V.
This MOSFET operates at temperatures up to 150°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and is suitable for surface mount applications. The package is a 6-UDFNB (2x2) with an exposed pad, also referred to as 6-WDFN Exposed Pad.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 12V.
The continuous drain current (Ta) is 12A.
The maximum power dissipation (Ta) is 1.25W.
The operating temperature range is up to 150°C (TJ).
The SSM6J505NU,LF is a P-Channel MOSFET.
The device is supplied in a 6-UDFNB (2x2) package, also known as 6-WDFN Exposed Pad, and is suitable for surface mounting.