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SSM4K27CTTPL3 The Toshiba SSM4K27CTTPL3 is an N-Channel MOSFET designed for switching applications. It features a 20V drain-source voltage and a 500mA continuous current rating.
Mfr Part #:

SSM4K27CTTPL3

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM4K27CTTPL3 is an N-Channel MOSFET designed for switching applications. It features a 20V drain-source voltage and a 500mA continuous current rating.
✓ Total Stock: 20,000 pcs
$ Price Range: $2.56

SSM4K27CTTPL3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
20,000 pcs
On Request
20000 pcs On Request 1 On Request On Request 1122+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSM4K27CTTPL3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SSM4K27CTTPL3 Description

Short technical summary and product information.

The Toshiba SSM4K27CTTPL3 is a silicon N-Channel MOSFET from the U-MOSⅢ technology family, suitable for switching applications. It offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 500mA at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds On) of 205 mΩ maximum at a gate-source voltage (Vgs) of 4V and a drain current (Id) of 250mA. Its gate threshold voltage (Vth) is a maximum of 1.1V at 1mA. The input capacitance (Ciss) is 174 pF maximum at 10V drain-source voltage. This device is housed in a compact CST4 (1.2x0.8 mm) surface mount package (4-SMD, No Lead) and operates at temperatures up to 150°C.

 

With a maximum power dissipation of 400mW (Ta=25°C), the SSM4K27CTTPL3 is designed for efficient operation. The gate-source voltage range is ±12V. This MOSFET is suitable for various electronic designs requiring a small, reliable N-channel switching transistor.

SSM4K27CTTPL3 Quick Information

Product Type: MOSFET
Canonical Name: SSM4K27CT N-Channel MOSFET
Subcategory: N-Channel

SSM4K27CTTPL3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM4K27CTTPL3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM4K27CTTPL3 Features

  • N-Channel MOSFET for switching applications.
  • 20V Drain-Source Voltage (Vdss).
  • 500mA Continuous Drain Current.
  • Low On-Resistance: 205mOhm max.
  • Compact 4-SMD, No Lead CST4 package.

SSM4K27CTTPL3 Applications

  • Suitable for general switching circuits.
  • Ideal for compact electronic designs.
  • Used in power management applications.
  • Efficient for low-power switching tasks.

SSM4K27CTTPL3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SSM4K27CTTPL3?

The maximum drain-source voltage (Vdss) for the SSM4K27CTTPL3 is 20V.

What is the continuous drain current rating of the SSM4K27CTTPL3?

The continuous drain current rating for the SSM4K27CTTPL3 is 500mA at 25°C ambient temperature.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On for the SSM4K27CTTPL3 is 205 mΩ when measured at 250mA drain current and 4V gate-source voltage.

What is the package type of the SSM4K27CTTPL3?

The SSM4K27CTTPL3 is supplied in a 4-SMD, No Lead CST4 package.

What is the operating temperature range for the SSM4K27CTTPL3?

The operating temperature range (TJ) for the SSM4K27CTTPL3 is up to 150°C.

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