| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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904,000 pcs
|
904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,326 pcs
|
7326 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Toshiba SSM3K7002F is an N-Channel MOSFET designed for low-power switching applications. It features a breakdown voltage of 60V and a continuous drain current rating of 115mA, making it suitable for signal-level switching and load control.
Key electrical characteristics include a threshold voltage of 2.5V, a drain-source on-resistance of 3Ω, and an input capacitance of 17pF. The device can dissipate up to 200mW of power and operates over a temperature range of -55°C to 150°C.
This MOSFET is commonly used in portable electronics, power management circuits, and general-purpose switching due to its low on-resistance and small signal handling capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 60V.
The continuous drain current is 115mA.
The operating temperature range is -55°C to 150°C.
The threshold voltage is 2.5V.
The drain-source on-resistance is 3Ω.