| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba SSM3K59CTB,L3F is an N-Channel MOSFET featuring a drain-source voltage of 40V and a continuous current rating of 2A. The device operates at temperatures up to 150°C.
Designed for surface mounting, this MOSFET comes in a compact CST3B package. Key electrical characteristics include a maximum on-resistance of 215mOhm at 1A and 8V, an input capacitance of 130pF at 10V, and a gate charge of 1.1nC at 4.2V. The gate threshold voltage is a maximum of 1.2V at 1mA.
With its specified electrical parameters and surface mount capability, the SSM3K59CTB,L3F is suitable for various electronic applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous current rating is 2A.
The operating temperature range is up to 150°C.
It is available in the CST3B package.
The maximum on-resistance is 215mOhm at 1A and 8V.
The gate threshold voltage is a maximum of 1.2V at 1mA.