| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
821,818 pcs
|
821818 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba SSM3K56MFV,L3F is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and can handle a continuous current of 800mA at ambient temperature.
The MOSFET has a low on-resistance (Rds On) of 235mOhm at 800mA and 4.5V Vgs, with a gate threshold voltage (Vgs(th)) of 1V at 1mA. Its input capacitance (Ciss) is 55pF at 10V Vds, and gate charge (Qg) is 1nC at 4.5V Vgs. The maximum gate-to-source voltage is ±8V.
Operating at temperatures up to 150°C (TJ), this device has a maximum power dissipation of 150mW at ambient temperature. It utilizes MOSFET technology and comes in a compact SOT-723 surface mount package (VESM).
The SSM3K56MFV,L3F is suitable for applications requiring efficient switching and low power consumption. Its surface mount design facilitates integration into compact circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
800mA at ambient temperature.
SOT-723 surface-mount package with VESM supplier device package.
150°C.
1V at Id=1mA.
235mOhm at Vgs=4.5V and Id=800mA.
150mW at ambient temperature.