SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,488 pcs
|
7488 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The Toshiba SSM3K56MFV is a Silicon N-Channel MOSFET designed for various electronic applications. It features a maximum Drain-Source Voltage of 20V and a typical Drain-Source Resistance of 235mΩ. The device has a maximum power dissipation of 500mW and can operate up to a maximum temperature of 150°C.
This MOSFET is housed in a compact SOT-723 package, making it suitable for space-constrained designs. It has 3 terminals and is manufactured by Toshiba.
Key electrical characteristics include a 20V Drain-Source Voltage rating and a low on-resistance of 235mΩ. The maximum power dissipation is 500mW, and it is rated for operation up to 150°C.
The SSM3K56MFV is a reliable component for applications requiring efficient switching and power management. Its SOT-723 package facilitates easy integration into surface-mount circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 20V.
The typical Drain-Source Resistance is 235mΩ.
The maximum power dissipation is 500mW.
The maximum operating temperature is 150°C.
The SSM3K56MFV is in a SOT-723 package.
The SSM3K56MFV has 3 terminals.
