| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Operating Temperature |
The SSM3K56FS,LF(T from Toshiba is an N-Channel MOSFET suitable for electronic designs requiring efficient switching and amplification. This component offers a drain-source breakdown voltage of 20V and a continuous drain current of 800mA.
Key electrical characteristics include an on-state drain-source resistance of 235mΩ and a gate charge of 1nC. The device operates with a gate-source voltage of 8V and has a maximum power dissipation of 500mW. Its operating temperature range is from -55℃ to 150℃.
The MOSFET is provided in an SPM package and is designed for SMD mounting, making it suitable for compact circuit board designs. Its robust construction and specified parameters make it a reliable choice for engineers working on power management and signal control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
800mA.
235mΩ.
500mW.
1nC.
-55°C to 150°C.
SPM surface mount.