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SSM3K56FS,LF The Toshiba SSM3K56FS,LF is an N-Channel MOSFET designed for surface mount applications. It offers a 20V drain-source breakdown voltage and 800mA continuous drain current.
Mfr Part #:

SSM3K56FS,LF

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM3K56FS,LF is an N-Channel MOSFET designed for surface mount applications. It offers a 20V drain-source breakdown voltage and 800mA continuous drain current.
✓ Total Stock: 723,200 pcs
$ Price Range: $2.56

SSM3K56FS,LF Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
723,200 pcs
On Request
723200 pcs On Request 1 On Request On Request On Request On Request On Request
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SSM3K56FS,LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SSM3K56FS,LF Description

Short technical summary and product information.

The Toshiba SSM3K56FS,LF is an N-Channel MOSFET with a surface mount package, suitable for various electronic applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of 800mA (Ta).

 

Key electrical characteristics include an input capacitance of 55pF at 10V and a gate charge of 1nC at 4.5V. The gate-source threshold voltage is specified as a maximum of 1V at 1mA, with a maximum gate-source voltage of ±8V. The on-resistance (Rds On) is a maximum of 235mOhm at 800mA and 4.5V.

 

This MOSFET operates within a temperature range of -55°C to +150°C (TJ) and has a maximum power dissipation of 150mW (Ta). The technology used is MOSFET (Metal Oxide) with a silicon (Si) semiconductor material. The package type is SSM - 3, designed for surface mount (Smd/Smt) installation and supplied on a reel.

 

This component is classified under Transistors - FETs, MOSFETs - Single, with a product family of MOSFETs and a subcategory of N-Channel. It is manufactured by Toshiba.

SSM3K56FS,LF Quick Information

Product Type: MOSFET
Canonical Name: Toshiba SSM3K56FS,LF N-Channel MOSFET
Subcategory: N-Channel

SSM3K56FS,LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SSM3K56FS,LF Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM3K56FS,LF Features

  • N-Channel MOSFET with 20V breakdown voltage.
  • 800mA continuous drain current capability.
  • Surface mount package for SMT assembly.
  • Low gate charge and on-resistance.
  • Wide operating temperature range.

SSM3K56FS,LF Applications

  • Suitable for general-purpose switching.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable in low-voltage power supplies.

SSM3K56FS,LF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SSM3K56FS,LF?

The drain-source breakdown voltage is 20V.

What is the continuous drain current of the SSM3K56FS,LF?

The continuous drain current is 800mA (Ta).

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to +150°C (TJ).

What package type is the SSM3K56FS,LF MOSFET supplied in?

The SSM3K56FS,LF is supplied in a Reel package, with a package/case code of SSM - 3.

Is the SSM3K56FS,LF RoHS compliant?

The RoHS Status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SSM3K56FS,LF?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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