| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Turn Off Time | |
| Turn On Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM3K37FS,LF is a silicon N-channel MOSFET suitable for high-speed switching and analog switch applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 200mA at 25°C.
This MOSFET boasts low ON-resistance (Rds(on)) values, with a maximum of 2.20 Ω at 100mA drain current and 4.5V gate-source voltage (Vgs). It also supports 1.5V drive, enabling low-voltage operation. The gate threshold voltage (Vth) is a maximum of 1.0V at 1mA.
Packaged in an SC-75, SOT-416 (SSM) surface mount package, the SSM3K37FS,LF operates at temperatures up to 150°C. Its absolute maximum ratings include a gate-source voltage of ±10V and a power dissipation of 100mW.
Key electrical characteristics include input capacitance (Ciss) of 12pF, output capacitance (Coss) of 5.5pF, and reverse transfer capacitance (Crss) of 4.1pF, all measured at 1MHz. Switching times are also specified, with turn-on time at 18ns and turn-off time at 36ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 20V.
It is available in SC-75 (SOT-416) surface mount package with SSM supplier device package.
The maximum operating junction temperature is 150°C. The storage temperature range is -55°C to 150°C.
Maximum continuous drain current is 200mA, and pulsed drain current is 400mA.
Typical turn-on time is 18ns and turn-off time is 36ns under specified test conditions.
It is an N-Channel MOSFET with metal oxide technology.