| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,764 pcs
|
3764 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSM3K36MFV,L3F is an N-Channel enhancement mode MOSFET manufactured by Toshiba. It is designed for low-power switching applications and signal routing where a compact footprint is required.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 500mA at an ambient temperature of Ta. The device features a low gate threshold voltage (Vgs(th)) of 1V max at 1mA, enabling drive from low-voltage logic. The maximum on-resistance (Rds(on)) is 630 mOhm at Vgs=5V and Id=200mA. Input capacitance is 46pF typical at Vds=10V, and total gate charge is 1.23nC at Vgs=4V.
The device is housed in a surface-mount VESM package (SOT-723), which is well-suited for space-constrained designs. Operating junction temperature range extends to 150°C. The gate-source voltage maximum is ±10V, and the recommended drive voltage for optimized Rds(on) is 5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V
SOT-723 (VESM)
150°C (junction)
500 mA at Ta
1 V max at 1 mA
630 mOhm max at 200 mA, 5 V
Surface Mount