| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
175 pcs
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175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba SSM3K36FS,LF is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for surface mount applications and comes in a SC-75, SOT-416 package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Ta) of 500mA. The maximum on-resistance (Rds On) is 630mOhm at 200mA and 5V gate-source voltage. The gate charge (Qg) is a maximum of 1.23nC at 4V, and the input capacitance (Ciss) is 46pF at 10V.
The device operates within a temperature range of -150°C (TJ) and has a maximum power dissipation of 150mW (Ta). The gate threshold voltage (Vgs(th)) is 1V at 1mA, with a maximum gate-source voltage (Vgs) of ±10V. The drive voltage ranges from 1.5V to 5V for optimal Rds On performance.
This MOSFET is suitable for various electronic circuits requiring efficient switching and amplification. Its surface mount package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum continuous drain current is 500mA at Ta.
The package is SC-75 (also known as SOT-416) and the supplier device package is SSM.
The maximum operating junction temperature is 150°C.
The maximum on-resistance is 630mOhm at a drain current of 200mA and gate-source voltage of 5V.
The maximum gate threshold voltage is 1V at a drain current of 1mA.
It is designed for surface mount.