SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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4,897 pcs
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4897 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Toshiba SSM3K35FS is a general-purpose small signal N-Channel MOSFET. It is designed for switching applications and operates with a 20V minimum breakdown voltage and a maximum drain current of 180mA. The MOSFET has a maximum drain-source on-resistance of 4 ohms and a maximum power dissipation of 100mW at ambient temperature.
This component utilizes Metal-Oxide Semiconductor (MOS) FET technology and is configured as a single element with a built-in diode and resistor. It operates in enhancement mode and features a gull wing terminal form, suitable for surface mounting.
The SSM3K35FS is packaged in an SSM, 2-2H1B small outline package. Its dual terminal position and gull wing leads facilitate surface mount assembly processes.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 20 V.
The maximum drain current (ID) is 0.1800 A.
The maximum drain-source on-resistance is 4 ohm.
It is a general purpose small signal N-Channel MOSFET.
It is designed for surface mounting.
