SSM3K341R,LF The Toshiba SSM3K341R,LF is an N-Channel MOSFET with a 60V drain-source breakdown voltage and a 6A continuous drain current. It is supplied in a surface-mount SOT-23F package.
Mfr Part #:

SSM3K341R,LF

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM3K341R,LF is an N-Channel MOSFET with a 60V drain-source breakdown voltage and a 6A continuous drain current. It is supplied in a surface-mount SOT-23F package.
✓ Total Stock: 29 pcs
$ Price Range: $2.56

SSM3K341R,LF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
28 pcs
28 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1 pcs
1 pcs On Request 1 On Request On Request On Request On Request On Request

SSM3K341R,LF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SSM3K341R,LF Description

Short technical summary and product information.

The Toshiba SSM3K341R,LF is a high-performance N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 60V and can handle a continuous drain current of up to 6A. The MOSFET exhibits a low on-resistance of 36mOhm at 5A and 10V, ensuring efficient power transfer.

 

With a gate charge of 9.3nC at 10V and a gate-source threshold voltage of 2.5V at 100µA, this device offers precise control. It operates within a temperature range of -55°C to 175°C and has a power dissipation of 1.2W.

 

The SSM3K341R,LF is housed in a compact SOT-23F surface-mount package, making it suitable for space-constrained designs. Its technology is based on MOSFET (Metal Oxide) principles, providing reliable switching characteristics with fast rise and fall times.

 

This component is ideal for applications requiring efficient power switching and control. Its robust specifications and surface-mount design facilitate integration into a wide array of electronic circuits.

SSM3K341R,LF Quick Information

Product Type: MOSFET
Series: SSM3K341
Canonical Name: Toshiba SSM3K341R,LF N-Channel MOSFET
Subcategory: N-Channel

SSM3K341R,LF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM3K341R,LF Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM3K341R,LF Features

  • 60V drain-source breakdown voltage.
  • 6A continuous drain current.
  • Low 36mOhm max Rds On.
  • Compact SOT-23F surface-mount package.
  • Fast switching times.

SSM3K341R,LF Applications

  • Ideal for power management circuits.
  • Suitable for DC-DC converter designs.
  • Used in load switch applications.
  • Applicable for battery protection circuits.
  • Works in high-frequency switching regulators.

SSM3K341R,LF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SSM3K341R,LF?

60 V.

What is the maximum continuous drain current?

6 A.

What is the on-resistance (Rds(on))?

36 mOhm maximum at 5A, 10V.

What is the operating temperature range?

-55°C to 175°C (junction).

What package is the SSM3K341R,LF available in?

SOT-23-3 case with SOT-23F supplier device package, surface mount.

What is the gate threshold voltage?

Maximum 2.5 V at 100 µA drain current.

What are the typical switching times?

Rise time 6 ns, fall time 48 ns, turn-on delay 18 ns, turn-off delay 63 ns.

Home
Account

Categories