| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
430,476 pcs
|
430476 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM3K339R,LF is a single N-Channel MOSFET belonging to the U-MOSVII-H series. It is designed for surface mount applications and comes in a SOT-23F package. This MOSFET offers a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of 2A at 25°C. The on-resistance (Rds On) is a maximum of 185mOhm at 1A and 8V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 1.2V at 1mA. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1W (Ta).
Key electrical characteristics include an input capacitance (Ciss) of 130 pF at 10V Vds and a gate charge (Qg) of 1.1 nC at 4.2V Vgs. The maximum gate-source voltage (Vgs) is ±12V. The drive voltage ranges from 1.8V to 8V. This component is suitable for various power management and discrete component applications where a reliable N-Channel MOSFET is required in a compact surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
2 A at 25°C.
185 mOhm maximum at 1A, 8V.
1.2 V maximum at 1mA.
150°C.
SOT-23F (SOT-23-3 Flat Leads).
1.1 nC maximum at 4.2V.