| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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190 pcs
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190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM3K335R,LF is a single N-Channel MOSFET from the U-MOSVI series. It features a drain-source breakdown voltage of 30V and a continuous drain current of 6A at ambient temperature. The device has a low on-resistance (Rds On) of 38mOhm at 4A and 10V gate-source voltage, with a gate charge of 2.7nC at 4.5V.
This MOSFET is designed for surface mount applications, housed in a SOT-23F package. It operates within a temperature range of -55°C to 150°C. The input capacitance is rated at 340pF at 15V. The gate-source voltage is limited to ±20V, and the threshold voltage is a maximum of 2.5V at 100µA.
The SSM3K335R,LF has a maximum power dissipation of 1W at ambient temperature. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 6A.
The drain-source breakdown voltage is 30V.
The Rds On (Max) is 38mOhm at 4A and 10V.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1.