| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
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301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| Input Capacitance | |
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| Power Dissipation |
The SSM3K318T,LF from Toshiba is a single N-Channel MOSFET. It is designed to operate with a drain-source voltage (Vdss) of up to 60V and can handle a continuous drain current (Id) of 2.5A at 25°C.
Key electrical characteristics include a typical on-resistance (RdsOn) of 107mΩ when measured at 2A drain current and 10V gate-source voltage. The device also features a typical gate charge (Qg) of 7nC at 10V and an input capacitance (Ciss) of 235pF at 30V.
With a power dissipation rating of 700mW at 25°C ambient temperature, the SSM3K318T,LF is suitable for applications requiring moderate power handling. The maximum operating junction temperature (TJ) is 150°C.
This MOSFET is supplied in a TSM package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The continuous drain current is 2.5A at 25°C.
The typical on-resistance is 107mΩ at 2A and 10V.
The operating temperature is up to 150°C.
The package type is TSM.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.