| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SSM3K318T.LF from Toshiba is a single N-Channel MOSFET housed in a TSM surface-mount package. This component is rated for a maximum drain-source voltage (Vds) of 60V and can handle a continuous drain current (Id) of up to 2.5A at 25°C.
Key electrical characteristics include a typical on-resistance (RdsOn) of 107mΩ at 2A and 10V, and a total gate charge (Qg) of 7nC at 10V. The input capacitance (Ciss) is 235pF at 30V. The device has a maximum power dissipation of 700mW at Ta and an operating junction temperature (TJ) of up to 150°C.
This MOSFET is suitable for applications requiring efficient switching and power management. Its surface-mount TSM package facilitates integration into compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V at 25°C.
The maximum continuous drain current is 2.5A at 25°C.
The typical on-resistance is 107mOhm at 2A drain current and 10V gate-source voltage.
The maximum junction temperature is 150°C.
It comes in a TSM surface mount package.
The typical total gate charge is 7nC at 10V gate voltage.
The typical input capacitance is 235pF at 30V drain-source voltage.