| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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106 pcs
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106 pcs | On Request | 1 | On Request | On Request | 1605 | On Request | On Request |
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The Toshiba SSM3K301T is a silicon N-Channel MOS Type Field Effect Transistor designed for power management and high-speed switching applications. It features a 1.8V drive capability and low ON-resistance, with a maximum of 56 mΩ at 2A and 4V Vgs. The device supports a drain-source voltage of up to 20V and a continuous drain current of 3.5A.
Key electrical characteristics include a gate threshold voltage ranging from 0.4V to 1.0V, and a maximum power dissipation of 700mW at 25°C ambient temperature. The MOSFET has an input capacitance of 320pF and a total gate charge of 4.8nC.
Packaged in a TSM (TO-236-3, SC-59, SOT-23-3) surface mount package, the SSM3K301T is suitable for compact designs. Its operating temperature range is from -55°C to 150°C, with a channel temperature limit of 150°C. This component is designed for applications requiring efficient power control and fast switching speeds.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SSM3K301T is 20V.
The continuous drain current (Id) for the SSM3K301T is 3.5A.
The maximum ON-resistance (Rds On) for the SSM3K301T is 56mΩ at 2A drain current and 4V gate-source voltage.
The gate threshold voltage (Vth) for the SSM3K301T ranges from 0.4V to 1.0V.
The SSM3K301T is supplied in a TSM package, which corresponds to TO-236-3, SC-59, and SOT-23-3.
The operating temperature range for the SSM3K301T is -55°C to 150°C.