| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM3K2615R,LF is an N-Channel MOSFET suitable for applications such as load switches and motor drivers. This device offers a drain-source voltage of 60V and a continuous drain current of 2A.
Key electrical characteristics include a low drain-source on-resistance (Rds(on)) of 380 mΩ typical at VGS = 3.3V and ID = 0.5A, and 230 mΩ typical at VGS = 10V and ID = 1.0A. The gate-source voltage has a maximum rating of ±20V, and the threshold voltage is 2V typical at 1mA. The input capacitance (Ciss) is rated at 150 pF maximum at 10V.
This MOSFET is housed in a SOT-23F surface-mount package, facilitating integration into compact electronic designs. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 1W (Ta).
The SSM3K2615R,LF is AEC-Q101 qualified, indicating its suitability for automotive applications. It also features a 3.3V gate drive voltage capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 volts.
SOT-23F (SOT-23-3 Flat Leads).
150 degrees Celsius.
1 milliampere.
230 milliohms.
52.9 millijoules.