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SSM3K15AMFV,L3F Toshiba SSM3K15AMFV,L3F is an N-Channel MOSFET designed for load switching applications. It features a 30V drain-source voltage and a compact SOT-723 package.
Mfr Part #:

SSM3K15AMFV,L3F

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
Toshiba SSM3K15AMFV,L3F is an N-Channel MOSFET designed for load switching applications. It features a 30V drain-source voltage and a compact SOT-723 package.
✓ Total Stock: 602,837 pcs
$ Price Range: $2.56

SSM3K15AMFV,L3F Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
602,667 pcs
On Request
602667 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
170 pcs
On Request
170 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSM3K15AMFV,L3F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Turn Off Time
Turn On Time
Vgs (Max)
Vgs(th) (Max) @ Id
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SSM3K15AMFV,L3F Description

Short technical summary and product information.

The Toshiba SSM3K15AMFV,L3F is a silicon N-channel MOS type field-effect transistor designed for load switching applications. It operates with a 2.5V drive and offers low ON-resistance, with a maximum of 3.6 Ω at 10mA and VGS of 4V, and 6.0 Ω at 10mA and VGS of 2.5V.

 

This MOSFET has a drain-source breakdown voltage of 30V and a continuous drain current of 100mA at 25°C. The maximum power dissipation is 150mW (Ta), and it can operate at channel temperatures up to 150°C. The input capacitance is 13.5 pF at 3V, and switching times are typically 5.5 ns for turn-on and 35 ns for turn-off.

 

Packaged in a SOT-723 surface-mount case, the SSM3K15AMFV,L3F is suitable for compact electronic designs. Its absolute maximum ratings include a drain-source voltage of 30V and a gate-source voltage of ±20V. Storage temperature ranges from -55°C to 150°C.

SSM3K15AMFV,L3F Quick Information

Product Type: MOSFET
Canonical Name: SSM3K15AMFV,L3F Toshiba N-Channel MOSFET
Subcategory: N-Channel

SSM3K15AMFV,L3F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM3K15AMFV,L3F Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM3K15AMFV,L3F Features

  • N-Channel MOSFET for load switching.
  • 30V drain-source breakdown voltage.
  • Low ON-resistance: 3.6Ω max @ 10mA, 4V.
  • Compact SOT-723 surface mount package.
  • Operates with 2.5V drive voltage.

SSM3K15AMFV,L3F Applications

  • Ideal for low-power switching applications.
  • Suitable for portable electronics designs.
  • Used in signal switching circuits.
  • Perfect for load switch implementations.

SSM3K15AMFV,L3F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the SSM3K15AMFV,L3F?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 100mA at 25°C ambient temperature.

What is the package type for this MOSFET?

The package type is SOT-723 (VESM) surface mount.

What is the maximum on-resistance at 4V gate drive?

The maximum on-resistance is 3.6Ω at VGS=4V and ID=10mA.

What is the gate threshold voltage range?

The gate threshold voltage is between 0.8V and 1.5V maximum at VDS=3V and ID=0.1mA.

What are the typical switching times?

Typical turn-on time is 5.5ns and turn-off time is 35ns under test conditions VDD=5V, ID=10mA, VGS=0 to 5V, RG=50Ω.

What is the maximum power dissipation?

The maximum power dissipation is 150mW at 25°C ambient temperature.

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