| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM3K15AFU,LF is a single N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 100mA at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 3.6 Ohms at 10mA drain current and 4V gate-source voltage, and an input capacitance (Ciss) of 13.5pF at 3V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 1.5V at 100µA, with a maximum gate-source voltage (Vgs) of ±20V. The device operates at a maximum temperature of 150°C (TJ) and has a maximum power dissipation of 150mW at ambient temperature.
This MOSFET is housed in a compact SC-70, SOT-323 package, suitable for surface mounting. Its technology is based on MOSFET (Metal Oxide) principles, providing efficient switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
SC-70, SOT-323 (Supplier device package: USM).
150°C.
100mA at ambient temperature.
Maximum 1.5V at 100µA drain current.
Surface mount.
150mW at ambient temperature.