| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,558 pcs
|
8558 pcs | On Request | 1 | On Request | On Request | 1334+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSM3K121TU is an N-Channel MOSFET manufactured by Toshiba. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 3.2A at ambient temperature (Ta). The device can dissipate up to 500mW of power under the same conditions. This MOSFET is housed in a SC70 surface-mount package, making it suitable for compact circuit designs. Typical applications include load switching, DC-DC converters, and general-purpose switching circuits where low voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
The continuous drain current is 3.2A at ambient temperature (Ta).
The maximum power dissipation is 500mW at ambient temperature (Ta).