| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000,000 pcs
|
2000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16,000 pcs
|
16000 pcs | On Request | 1 | On Request | On Request | 1152+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| FET Type | |
| Lead Style | |
| Mounting Type | |
| Technology |
The Toshiba SSM3J36MFV is a P-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor designed for power management applications. It features a 20V Drain-Source Voltage and a continuous Drain Current of 0.33A.
This MOSFET offers low ON-resistance values, with specific ratings such as 3.60 Ω maximum at VGS = -1.5 V, 2.70 Ω maximum at VGS = -1.8 V, 1.60 Ω maximum at VGS = -2.8 V, and 1.31 Ω maximum at VGS = -4.5 V. It supports a 1.5V drive voltage, making it suitable for low-voltage applications.
The component is constructed using silicon technology and is identified as a single-element P-Channel MOS Type FET. Its design is optimized for efficient power switching.
Details regarding package type, mounting, and specific environmental compliance beyond the general status are typically found in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
SSOP surface mount.
P-Channel.
1.31Ω maximum.
1.5V.
0.33A.