| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
97 pcs
|
97 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSM3J356R,LF is a P-Channel MOSFET manufactured by Toshiba, designed for general-purpose switching applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of 2A at 25°C ambient temperature. The device is optimized for gate drive voltages of 4V and 10V, with a maximum on-resistance of 300mOhm at 1A drain current and 10V gate drive. The gate threshold voltage is typically 2V at 1mA drain current. With a maximum gate charge of 8.3nC at 10V, the MOSFET offers efficient switching performance. The device is housed in a compact SOT-23F surface-mount package, suitable for space-constrained designs. It is commonly used in power management, load switching, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SSM3J356R,LF is housed in a SOT-23F surface-mount package.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 2A at 25°C ambient temperature.
The maximum gate threshold voltage is 2V at 1mA drain current.
The maximum on-resistance is 300mOhm at 1A drain current and 10V gate drive.