| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SSM3J334R,LF is a P-Channel MOSFET manufactured by Toshiba, designed for switching and power management applications. It is rated for a drain-source voltage of 30V and a continuous drain current of 4A at ambient temperature.
The device features a maximum on-resistance of 71mOhm at a gate-source voltage of 10V and a drain current of 3A. The maximum gate charge is 5.9nC at 10V, and input capacitance is 280pF at 15V drain-source voltage. The gate threshold voltage is 2V at 100µA. Maximum gate-source voltage is ±20V.
Power dissipation is rated at 1W at ambient temperature, with a maximum junction temperature of 150°C. The device is housed in a SOT23F package, suitable for surface mount applications.
This MOSFET is suitable for load switching, DC-DC converter circuits, and battery management in portable devices. Its P-Channel configuration simplifies drive circuitry in high-side switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
150°C (junction temperature).
4A at ambient temperature.
71mOhm maximum at 3A, 10V.
5.9nC maximum at 10V.
280pF maximum at 15V.
2V at 100µA.