| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,200 pcs
|
8200 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba SSM3J332R,LF is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at ambient temperature.
This MOSFET has a gate threshold voltage (Vgs(th)) of 1.2V at 1mA and a maximum gate-to-source voltage (Vgs) of ±12V. The on-resistance (Rds) is a maximum of 42mOhm at 5A and 10V. Input capacitance (Ciss) is 560pF at 15V, and gate charge (Qg) is 8.2nC at 4.5V.
Packaged in a SOT-23F surface mount configuration, the SSM3J332R,LF operates at temperatures up to 150°C. Its maximum power dissipation is 1W at ambient temperature. The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 6A.
This MOSFET is supplied in a SOT-23F package and is surface mountable.
The operating temperature is up to 150°C.
Yes, it is RoHS3 Compliant.