| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,668 pcs
|
5668 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba SSM3J331R,LF is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in a SOT-23F package.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Ta) of 4A. The on-resistance (Rds On) is a maximum of 55mOhm at 3A and 4.5V Vgs. Gate charge (Qg) is 10.4 nC at 4.5V Vgs, and input capacitance (Ciss) is 630 pF at 10V Vds. The gate threshold voltage (Vgs(th)) is 1V maximum at 1mA, and the maximum gate-source voltage is ±8V.
The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 1W (Ta). It is suitable for various electronic circuits requiring efficient switching and power management.
Mounting is via surface mount technology. The RoHS status is compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
4A at Ta=25°C.
1V at Id=1mA.
55mOhm maximum at 3A drain current and 4.5V gate drive.
10.4nC maximum at Vgs=4.5V.
630pF maximum at Vds=10V.
150°C maximum.