| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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623,448 pcs
|
623448 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Technology |
The Toshiba SSM3J328RLF is a P-Channel MOSFET belonging to the U-MOSVI series. It is designed for surface mount applications and comes in a SOT-23F package.
Key electrical specifications include a Drain to Source Voltage (Vdss) of 20V and a Continuous Drain Current (Id) of 6A at 25°C. The device features a maximum On-Resistance (Rds On) of 29.8mOhm at 3A and 4.5V, with a Gate Threshold Voltage (Vgs(th)) of 1V at 1mA. The maximum Gate to Source Voltage (Vgs) is ±8V, and the Input Capacitance (Ciss) is 840pF at 10V.
With a maximum power dissipation of 1W (Ta) and an operating temperature range of 150°C (TJ), this MOSFET is suitable for demanding environments. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
This component is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1. It is designed for efficient power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage is 20 V.
The continuous drain current is 6 A at 25°C ambient temperature.
The maximum on-resistance is 29.8 mOhm at 3A drain current and 4.5V gate drive.
It comes in a SOT-23F surface mount package, also described as SOT-23-3 Flat Leads.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage is 1 V at 1 mA drain current.
The maximum power dissipation is 1 W at ambient temperature.