| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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516,571 pcs
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516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba SSM3J327R is a silicon P-channel MOS field-effect transistor designed for power management switch applications. It supports a 1.5-V drive and offers low ON-resistance values, with a minimum of 93 mΩ at VGS = -4.5 V. The device has a drain-source voltage rating of -20 V and a continuous drain current of -3.9 A.
Key electrical characteristics include a gate threshold voltage ranging from -0.3 V to -1.0 V. Capacitance values such as input capacitance (Ciss) are typically 290 pF, output capacitance (Coss) at 44 pF, and reverse transfer capacitance (Crss) at 32 pF, measured at 1 MHz. Switching times are also specified, with turn-on time at 12.0 ns and turn-off time at 46.2 ns.
The SSM3J327R comes in a SOT-23F surface-mount package. It is rated for a channel temperature up to 150 °C and a storage temperature range of -55 to 150 °C. Power dissipation is 2 W when mounted on a FR4 board with a specified copper pad size.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20 V.
The maximum ON-resistance is 93 mΩ at ID = -1.5 A and VGS = -4.5 V.
The gate threshold voltage ranges from -0.3 V to -1.0 V.
The SSM3J327R is available in a SOT-23F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.