| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,205,000 pcs
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1205000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba SSM3J16FV is a general-purpose small signal P-channel MOSFET. It features a breakdown voltage of 20V and a maximum continuous drain current of 100mA. The MOSFET has a drain-source on-resistance of 8 ohms and is designed for enhancement mode operation.
This component is housed in a small outline VESM package, suitable for surface mounting. It includes a built-in diode and resistor, simplifying circuit design for switching applications. The P-channel configuration makes it ideal for applications requiring a negative voltage swing relative to the source.
With a maximum power dissipation of 0.15W at ambient temperature, the SSM3J16FV is a versatile choice for various electronic designs. Its construction utilizes metal-oxide semiconductor technology, ensuring reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 20V.
The maximum drain current is 100 mA.
The maximum drain-source on-resistance is 8 ohm.
It is in a small outline VESM package.
The RoHS status is RoHS3 Compliant.
The MSL is Level 1.