SSM3J16FV The Toshiba SSM3J16FV is a P-channel MOSFET designed for switching applications. It offers a breakdown voltage of 20V and a maximum drain current of 100mA.
Mfr Part #:

SSM3J16FV

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM3J16FV is a P-channel MOSFET designed for switching applications. It offers a breakdown voltage of 20V and a maximum drain current of 100mA.
✓ Total Stock: 1,205,000 pcs
$ Price Range: $2.81

SSM3J16FV Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,205,000 pcs
1205000 pcs On Request 1 On Request On Request On Request On Request On Request

SSM3J16FV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SSM3J16FV Description

Short technical summary and product information.

The Toshiba SSM3J16FV is a general-purpose small signal P-channel MOSFET. It features a breakdown voltage of 20V and a maximum continuous drain current of 100mA. The MOSFET has a drain-source on-resistance of 8 ohms and is designed for enhancement mode operation.

 

This component is housed in a small outline VESM package, suitable for surface mounting. It includes a built-in diode and resistor, simplifying circuit design for switching applications. The P-channel configuration makes it ideal for applications requiring a negative voltage swing relative to the source.

 

With a maximum power dissipation of 0.15W at ambient temperature, the SSM3J16FV is a versatile choice for various electronic designs. Its construction utilizes metal-oxide semiconductor technology, ensuring reliable performance.

SSM3J16FV Quick Information

Product Type: MOSFET
Series: SSM3J
Canonical Name: SSM3J16FV P-Channel MOSFET
Subcategory: Single MOSFETs

SSM3J16FV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM3J16FV Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM3J16FV Features

  • P-channel MOSFET for switching.
  • 20V minimum breakdown voltage.
  • 100mA maximum drain current.
  • 8 ohm maximum drain-source resistance.
  • Surface mount small outline package.

SSM3J16FV Applications

  • Ideal for low-power switching circuits.
  • Used in general purpose signal amplification.
  • Suitable for portable electronic devices.
  • Applicable in power management for battery-operated systems.

SSM3J16FV FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the SSM3J16FV?

The minimum breakdown voltage is 20V.

What is the maximum continuous drain current for the SSM3J16FV?

The maximum drain current is 100 mA.

What is the on-resistance of the SSM3J16FV?

The maximum drain-source on-resistance is 8 ohm.

What type of package is the SSM3J16FV in?

It is in a small outline VESM package.

Is the SSM3J16FV RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SSM3J16FV?

The MSL is Level 1.

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