| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
42,475 pcs
|
42475 pcs | On Request | 1 | On Request | On Request | 1602+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) |
The Toshiba SSM3J14TTE85LF is a P-Channel enhancement-mode MOSFET designed for general-purpose switching applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current of 2.7A (at Ta). The device features a maximum on-resistance (Rds(on)) of 85mOhm at Vgs = 10V and Id = 1.35A, ensuring efficient power handling with low conduction losses.
The MOSFET supports gate drive voltages of 4V and 10V, with an absolute maximum gate-source voltage rating of ±20V. Input capacitance (Ciss) is 413pF at Vds = 15V, contributing to moderate switching speeds suitable for many low-power circuits. Maximum power dissipation is 700mW at ambient temperature.
The SSM3J14TTE85LF is packaged in a compact TO-236-3 / SC-59 / SOT-23-3 compatible surface-mount package (TSM supplier package), making it suitable for space-constrained PCB designs. The operating junction temperature range extends to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 2.7A at ambient temperature (Ta).
The maximum on-resistance (Rds(on)) is 85mOhm at Vgs = 10V and Id = 1.35A.
It is available in a surface-mount TSM package, compatible with TO-236-3, SC-59, and SOT-23-3 footprints.
The maximum operating junction temperature is 150°C.